Mg₄Bi₄O₁₀ is an experimental semiconductor compound belonging to the family of mixed-metal oxides, combining magnesium and bismuth in an oxidic matrix. While not yet established in mainstream industrial production, this material class is of research interest for potential optoelectronic and photocatalytic applications, particularly where bismuth-containing oxides show promise for visible-light-responsive devices. Engineers evaluating this compound should recognize it as an emerging material whose selection would depend on specialized research or development contexts rather than established commercial applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 65.89 | GPa | — | ||
Shear Modulus(G) | 35.89 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.613 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.867 | eV/atom | — |