Mg4 Bi2 As2 O12

semiconductor

· Mg4 Bi2 As2 O12

Mg₄Bi₂As₂O₁₂ is an inorganic oxide semiconductor compound combining magnesium, bismuth, and arsenic in a mixed-metal oxide structure. This is a research-phase material primarily explored in solid-state physics and materials science literature for its electronic and photonic properties, rather than an established industrial workhorse. The bismuth and arsenic oxide combinations are of academic interest for potential applications in optoelectronics, photocatalysis, and semiconductor device research, though commercial deployment remains limited and the material is typically investigated in laboratory or prototype contexts.

research semiconductorsphotocatalytic materialsoptoelectronic devicessolid-state physicsexperimental electronic materialsoxide semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.469	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.059	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mg4 Bi2 As2 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control