Mg4 B8 Ru10
semiconductorMg4B8Ru10 is an experimental intermetallic compound combining magnesium, boron, and ruthenium elements, representing a research-phase material in the boride-based metallic systems family. This composition falls within advanced materials chemistry focused on high-performance intermetallics, though industrial adoption remains limited and primary development occurs in academic and specialized materials research settings. The material's potential relevance lies in high-temperature structural applications or specialized electronic/catalytic functions where ruthenium's properties and boride stability can be leveraged, though engineering evaluation would require assessment against established alternatives in the target application domain.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |