Mg₄As₂ is a magnesium arsenide semiconductor compound belonging to the III-V semiconductor family, though less commonly studied than traditional gallium arsenide or indium phosphide systems. This material is primarily of research interest for potential optoelectronic and solid-state applications, where magnesium-based semiconductors are explored as alternatives to more conventional compound semiconductors, though industrial adoption remains limited. Engineers would consider this material in specialized research contexts focused on wide-bandgap semiconductors or novel photovoltaic architectures where magnesium's low density and electrochemical properties offer theoretical advantages.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,932.9 | ksi | — | ||
Shear Modulus(G) | 2,547.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4240 | eV/atom | — |