Mg₄As₁₆ is a magnesium arsenide semiconductor compound belonging to the III-V semiconductor family, characterized by a wide bandgap and high structural rigidity. This is primarily a research and development material explored for optoelectronic and high-temperature semiconductor applications, though it remains largely experimental with limited commercial deployment compared to more established semiconductors like GaAs or InP. Engineers consider this material for niche applications requiring radiation hardness, wide bandgap switching performance, or integration in specialized device architectures where magnesium-based semiconductors offer advantages over conventional alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,795.9 | ksi | — | ||
Shear Modulus(G) | 4,036.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8396 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2470 | eV/atom | — |