Magnesium phosphide (Mg3P2) is an inorganic compound semiconductor belonging to the III-V family, characterized by its ionic bonding between magnesium cations and phosphide anions. While primarily of research interest rather than established in high-volume commercial production, Mg3P2 is investigated for potential applications in optoelectronics, thermoelectric devices, and solid-state physics due to its semiconducting properties and thermal stability. Its relatively low density and moderate mechanical stiffness make it a candidate material for exploratory work in wide-bandgap semiconductor applications, though practical engineering adoption remains limited compared to more mature III-V compounds like GaAs or GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,474.6 | ksi | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G) | 5,798.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.07392 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.400 | eV | — | ||
| ↳ | 1.690 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -148.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.7870 | eV/atom | — |