Magnesium nitride (Mg₃N₂) is an inorganic ceramic compound and wide-bandgap semiconductor belonging to the metal nitride family. It is primarily investigated in research and emerging applications for its potential as a high-temperature structural material and wide-bandgap semiconductor, offering advantages over conventional ceramics in thermal stability and nitride-based device compatibility. Current industrial adoption remains limited, but its use is expanding in specialized sectors including thermal barrier coatings, catalytic applications, and next-generation semiconductor devices where thermal conductivity and chemical stability are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.697 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.917 | eV | DFT · OptB88vdW | ||
| ↳ | 2.800 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 5.281 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000404 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000637 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -67.38 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 448.8 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.9762 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.9557 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data