Magnesium nitride (Mg₃N₂) is an inorganic ceramic compound and wide-bandgap semiconductor belonging to the metal nitride family. It is primarily investigated in research and emerging applications for its potential as a high-temperature structural material and wide-bandgap semiconductor, offering advantages over conventional ceramics in thermal stability and nitride-based device compatibility. Current industrial adoption remains limited, but its use is expanding in specialized sectors including thermal barrier coatings, catalytic applications, and next-generation semiconductor devices where thermal conductivity and chemical stability are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.697 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.800 | eV | — | ||
| ↳ | 1.917 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -67.38 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.9557 | eV/atom | — | ||
| ↳ | -0.9762 | eV/atom | — |