Mg3AsN

semiconductor
· Mg3AsN

Mg3AsN is a wide-bandgap III-V semiconductor compound composed of magnesium, arsenic, and nitrogen, belonging to the family of nitride-based semiconductors. This is primarily a research and development material rather than an established commercial semiconductor; it is studied for potential optoelectronic and high-temperature electronic applications where the combination of wide bandgap, low density, and thermal stability could offer advantages over conventional III-V semiconductors like GaAs or GaN. Interest in magnesium-based nitrides stems from the broader potential of this materials class for ultraviolet emitters, high-power devices, and extreme-environment electronics, though Mg3AsN itself remains largely in early-stage investigation with limited industrial deployment.

wide-bandgap semiconductor researchUV optoelectronics (experimental)high-temperature electronics (developmental)III-V nitride device platformslightweight semiconductor applications

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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eV——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

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