Mg3As2 is a binary intermetallic semiconductor compound belonging to the III-V semiconductor family, composed of magnesium and arsenic. This material is primarily of research interest for optoelectronic and thermoelectric applications, as it exhibits semiconductor properties suitable for niche device development. While not widely commercialized compared to established III-V compounds like GaAs or InP, Mg3As2 is investigated for potential use in high-temperature electronics and specialized photonic devices where its thermal and electrical characteristics may offer advantages over conventional alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,983.5 | ksi | — | ||
Shear Modulus(G) | 4,073.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.107 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6850 | eV/atom | — |