Mg2Si0.999Bi0.001

ceramic

· Mg2Si0.999Bi0.001

Mg2Si0.999Bi0.001 is a magnesium silicide-based intermetallic compound with bismuth doping, belonging to the ceramic/compound semiconductor family. This is an experimental material composition designed for thermoelectric applications, where the bismuth dopant modifies the electronic and thermal transport properties of the base Mg2Si phase. The material family is of research interest for waste heat recovery and solid-state cooling systems where tuning carrier concentration and phonon scattering through selective doping offers potential advantages over undoped variants.

thermoelectric power generationwaste heat recoverysolid-state cooling devicesmid-temperature heat management (300–600 K)research/development applicationsbismuth-doped semiconductors

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)2 entries	3.660	W/(m·K)	—
↳	3.660	W/(m·K)	427°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Electrical Conductivity(σ)	315.8	S/cm	427°C
Electrical Resistivity(ρe)	0.0000317	Ω·m	427°C
Thermoelectric Power Factor(PF)	0.00168	W/(m·K²)	427°C
Seebeck Coefficient(S)	-231	μV/K	427°C
Thermoelectric Figure of Merit(zT)	0.3222	-	427°C

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mg2Si0.999Bi0.001

Thermal Properties

Electrical Properties

Regulatory Screening

Environmental