Mg2Mn3InS8 is a quaternary chalcogenide compound combining magnesium, manganese, indium, and sulfur—a material family primarily developed for semiconductor and photovoltaic research rather than widespread industrial production. This compound is investigated for potential applications in solid-state electronics and energy conversion devices, where its unique electronic structure and mixed-metal composition may offer advantages in light absorption or charge transport, though it remains largely in the experimental phase with limited commercial deployment compared to established semiconductor alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.445 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07490 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8412 | eV/atom | — |