Mg₂₄As₁₆ is a magnesium arsenide compound semiconductor, representing a III-V semiconductor material family with potential for optoelectronic and high-frequency device applications. This compound exists primarily in research and development contexts rather than established commercial production, with the magnesium-arsenide system being investigated for its electronic band structure and potential use in specialized semiconductor devices where alternative III-V compounds may be less suitable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.588 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7080 | eV/atom | — |