Mg2W6 is a layered transition metal dichalcogenide compound in the family of two-dimensional materials, consisting of magnesium and tungsten with potential semiconducting properties. This material is primarily investigated in research contexts for nanoelectronic and optoelectronic applications, where its layered structure and tunable band gap make it relevant to next-generation device architectures. Compared to more established dichalcogenides like MoS2, Mg2W6 represents an alternative composition strategy for engineering electronic properties in flexible electronics, quantum devices, and integrated photonics, though it remains largely in the experimental phase.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00350 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.06100 | eV/atom | — |