Mg₂V₄O₁₀ is a mixed-metal oxide semiconductor compound combining magnesium and vanadium oxides, belonging to the family of transition-metal oxides with potential electrochemical and photocatalytic properties. This is primarily a research material rather than an established industrial compound, explored for its semiconductor characteristics in energy storage and catalysis applications where the vanadium oxidation states and layered oxide structure can be engineered for specific performance.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,454 | ksi | — | ||
Shear Modulus(G) | 4,673.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01650 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.562 | eV/atom | — |