Mg₂V₂S₂F₁₀ is an experimental mixed-anion semiconductor compound combining magnesium, vanadium, sulfur, and fluorine—a composition rarely encountered in conventional engineering materials. This research-phase material belongs to the class of complex metal fluoride-chalcogenides, which are being investigated for potential applications in solid-state ionics, energy storage, and next-generation optical or electronic devices where the combination of metal cations and mixed anionic frameworks may enable novel functionality.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 40.71 | GPa | — | ||
Shear Modulus(G) | 18.25 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02090 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.634 | eV/atom | — |