Mg2Sn4O10 is an inorganic oxide semiconductor compound belonging to the mixed-metal oxide family, containing magnesium and tin in a tetrahedral coordination structure. This material is primarily of research interest for optoelectronic and photocatalytic applications, where its wide bandgap and semiconducting properties make it attractive for UV-responsive devices, gas sensing, and environmental remediation. The compound represents the broader class of tin-based oxides that are being explored as alternatives to conventional semiconductors in niche applications where cost, abundance, or environmental factors favor tin chemistry over more established semiconductor platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 121.3 | GPa | — | ||
Shear Modulus(G) | 49.78 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.598 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.980 | eV/atom | — |