Mg₂Sn₂P₄ is an experimental ternary semiconductor compound combining magnesium, tin, and phosphorus elements. This material belongs to the family of metal phosphides and represents a research-phase compound with potential applications in optoelectronics and solid-state devices, though it remains primarily in academic study rather than established industrial production. Its notable characteristics stem from the combination of earth-abundant elements (magnesium and tin) with phosphorus, making it of interest for cost-effective and sustainable semiconductor development.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,305.9 | ksi | — | ||
Shear Modulus(G) | 4,110.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3810 | eV/atom | — |