Mg₂Si₂As₄ is a quaternary III-V semiconductor compound combining magnesium, silicon, and arsenic elements. This material exists primarily in research and developmental contexts rather than established commercial production, with potential applications in optoelectronic and high-temperature semiconductor devices that leverage its wide bandgap properties. The compound belongs to the broader family of arsenide semiconductors, which are investigated for specialized applications where conventional silicon or gallium arsenide may have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 60.18 | GPa | — | ||
Shear Modulus(G) | 31.63 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.366 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3370 | eV/atom | — |