Mg2Sb3O8 is a ternary oxide semiconductor compound combining magnesium, antimony, and oxygen. This material is primarily of research and development interest rather than an established commercial material, belonging to the broader family of mixed-metal oxides with potential applications in optoelectronics and solid-state device engineering. The compound's semiconductor properties make it relevant for exploratory work in photocatalysis, photodetection, and potentially thin-film electronic or photovoltaic device structures where the specific band gap and carrier transport characteristics of this composition offer advantages over conventional semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,896.1 | ksi | — | ||
Shear Modulus(G) | 6,964.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00870 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.722 | eV/atom | — |