Mg₂S₈In₄ is a ternary semiconductor compound combining magnesium, sulfur, and indium in a mixed-valence structure. This material belongs to an emerging class of quaternary and ternary semiconductors under investigation for optoelectronic and photovoltaic applications, where the combination of constituent elements offers tunable bandgaps and potential for thin-film device integration. While not yet in widespread commercial production, compounds in this family are researched for next-generation solar cells, photodetectors, and light-emitting devices where conventional III–V or II–VI semiconductors face cost, toxicity, or performance constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,712.7 | ksi | — | ||
Shear Modulus(G) | 4,008.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.727 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9190 | eV/atom | — |