Mg₂Mo₂N₄ is an experimental ternary nitride semiconductor compound combining magnesium and molybdenum. Research into this material family is motivated by potential applications in wide-bandgap semiconductors and optoelectronic devices, where the combination of light metals with refractory elements can yield novel electronic and thermal properties. While not yet commercialized at scale, nitride semiconductors in this composition space are being investigated for next-generation power electronics, UV detection, and high-temperature device applications where conventional III-V compounds reach their limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 36,757.4 | ksi | — | ||
Shear Modulus(G) | 27,847.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9389 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.094 | eV/atom | — |