Mg₂Mn₄O₁₀ is a mixed-valence manganese oxide semiconductor compound containing magnesium and manganese in a complex oxide lattice structure. This material is primarily of research interest for energy storage and catalytic applications, where manganese oxide semiconductors are explored for electrochemical performance in battery systems and oxygen reduction reactions. The magnesium-manganese oxide family offers potential advantages in cost and earth-abundance compared to rare-earth alternatives, though this specific composition remains largely in the developmental phase with applications focused on advanced energy devices and environmental remediation.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 16,743.7 | ksi | — | ||
Shear Modulus(G) | 4,613.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00590 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.887 | eV/atom | — |