Mg₂Mn₂Si₂O₁₀ is an oxide-based semiconductor compound combining magnesium, manganese, and silicate phases, belonging to the family of mixed-metal silicates with potential semiconducting behavior. This material is primarily investigated in research contexts for optoelectronic and photocatalytic applications, where the manganese dopant can introduce electronic states useful for visible-light absorption or charge separation. It represents an emerging alternative to more established semiconductors in applications requiring earth-abundant, non-toxic constituent elements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1295 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.509 | eV/atom | — |