Mg₂H₈N₄O₁₆ is a magnesium-based complex hydride semiconductor compound containing nitrogen and oxygen ligands, representing a research-phase material in the family of metal hydride nitrate systems. This compound is primarily of academic and exploratory interest for energy storage and hydrogen-related applications, with potential relevance to advanced battery chemistries, hydrogen generation pathways, and solid-state ion conductors, though industrial-scale deployment remains limited compared to conventional magnesium alloys or established ceramic semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.503 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9790 | eV/atom | — |