Mg₂H₆Os₁ is an experimental metal hydride semiconductor compound combining magnesium, hydrogen, and osmium elements. This material belongs to the family of complex metal hydrides, which are actively researched for energy storage, hydrogen-related applications, and functional semiconducting properties. As a research-phase compound rather than an established industrial material, it represents exploration into multi-element hydride systems that may offer novel electronic or electrochemical behavior distinct from conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,704.5 | ksi | — | ||
Shear Modulus(G) | 7,875.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.417 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3480 | eV/atom | — |