Mg₂Ge₂Ba₁ is an intermetallic semiconductor compound combining magnesium, germanium, and barium in a fixed stoichiometric ratio. This is a research-phase material studied for potential thermoelectric and optoelectronic applications, belonging to the broader family of ternary semiconductors and intermetallics that combine elements across different groups of the periodic table. The material's significance lies in its potential to engineer band gaps and thermal properties for energy conversion or light-emission devices, though industrial deployment remains limited and the compound remains primarily of academic interest for materials scientists exploring novel semiconductor compositions.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5450 | eV/atom | — |