Mg₂Fe₂Ge₄O₁₂ is a mixed-metal oxide semiconductor compound combining magnesium, iron, and germanium in a layered or complex crystal structure. This is a research-phase material primarily investigated for its potential in optoelectronic and photocatalytic applications, where the combination of earth-abundant elements (Mg, Fe) with semiconducting germanium offers a pathway to alternatives for rare-earth-dependent devices. The iron content introduces magnetic properties, making it of interest for multiferroic or magneto-optic applications where conventional single-phase semiconductors fall short.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00430 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.893 | eV/atom | — |