Mg₂Bi₄O₈ is a quaternary oxide semiconductor compound composed of magnesium and bismuth in a mixed-valence oxide matrix. While primarily of research interest, this material belongs to the family of bismuth-containing oxides that have attracted attention for photocatalytic, optoelectronic, and potential thermoelectric applications due to the electronic properties imparted by bismuth's 6s² lone pair. The material's significance lies in its potential as an alternative semiconductor platform in emerging applications where traditional semiconductors face limitations, though commercial use remains limited to specialized research and development contexts.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 73.38 | GPa | — | ||
Shear Modulus(G) | 33.33 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.811 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.635 | eV/atom | — |