Mg₂Bi₄O₁₂ is an inorganic semiconductor compound belonging to the magnesium bismuth oxide family, characterized by a mixed-valence structure combining magnesium and bismuth cations in an oxide lattice. This material is primarily of research interest for photocatalytic and optoelectronic applications, where bismuth-containing oxides are explored as alternatives to lead-based semiconductors for light absorption and charge transport. The compound's potential lies in environmental remediation and photocatalytic degradation of pollutants, though it remains largely in the experimental phase compared to commercialized semiconductor alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,673.1 | ksi | — | ||
Shear Modulus(G) | 8,123.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05920 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.266 | eV/atom | — |