Mg2Bi3O8 is an ternary oxide semiconductor compound combining magnesium, bismuth, and oxygen in a layered crystal structure. This is primarily a research material under investigation for optoelectronic and photocatalytic applications, rather than an established industrial material; compounds in the bismuth oxide family are of growing interest for visible-light photocatalysis, photodetection, and potential thermoelectric energy conversion due to bismuth's strong spin-orbit coupling and narrow bandgap characteristics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00880 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.541 | eV/atom | — |