Mg2 Bi2 As2 O12

semiconductor

· Mg2 Bi2 As2 O12

Mg2Bi2As2O12 is a complex ternary oxide semiconductor containing magnesium, bismuth, and arsenic in a structured lattice. This material belongs to the family of mixed-metal oxides and represents a research-phase compound of interest for photonic and electronic applications where the combination of these elements may yield unique band-gap properties or ferrimagnetic behavior. While not yet established in mainstream industrial production, materials in this compositional family are investigated for potential use in optoelectronics, magnetic devices, and specialized sensing applications where the interplay between bismuth and arsenic oxidation states can be leveraged.

experimental photonic devicessemiconductor researchmagnetic oxide materialsoptoelectronic componentssolid-state physics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.444	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.322	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mg2 Bi2 As2 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control