Mg₁V₄O₁₀ is a mixed-valence vanadium oxide ceramic compound with semiconductor characteristics, belonging to the family of transition metal oxides used in electrochemical and electronic applications. This material is primarily investigated in research contexts for energy storage devices, catalysis, and solid-state electronic applications where its layered structure and variable oxidation states of vanadium provide functional advantages. It represents a promising candidate for next-generation battery materials and catalytic systems, though it remains largely in the experimental phase compared to more established oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.05890 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.506 | eV/atom | — |