Mg₁V₂N₂ is a ternary nitride semiconductor compound combining magnesium and vanadium in a layered crystal structure. This is a research-stage material being investigated for wide-bandgap semiconductor applications where its combination of mechanical rigidity and electronic properties may enable novel device architectures. The material family of transition metal nitrides is of interest for high-temperature electronics, power devices, and photonic applications where conventional semiconductors reach performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,383.4 | ksi | — | ||
Shear Modulus(G) | 5,254.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000700 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5630 | eV/atom | — |