Mg₁Ta₁Os₂ is an intermetallic semiconductor compound combining magnesium, tantalum, and osmium—a research-phase material not yet established in mainstream production. This ternary system belongs to the family of high-entropy and refractory intermetallics being explored for extreme-environment applications where conventional semiconductors fail; its notable stiffness and the inclusion of refractory elements (tantalum, osmium) suggest potential for high-temperature electronic or structural applications, though industrial adoption remains limited pending demonstration of processability and reproducible performance.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33,556.9 | ksi | — | ||
Shear Modulus(G) | 14,625.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02450 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2540 | eV/atom | — |