Magnesium silicate phosphide (Mg₁Si₁P₂) is an experimental ternary compound semiconductor combining magnesium, silicon, and phosphorus elements. This material belongs to the broader family of wide-bandgap and III-V-like semiconductors, and remains primarily a research compound with limited commercial deployment; its potential lies in optoelectronic and high-temperature semiconductor applications where the combination of constituent elements may offer advantages in thermal stability or electronic properties compared to binary alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01240 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2800 | eV/atom | — |