Magnesium selenide (MgSe) is a binary II-VI semiconductor compound combining magnesium and selenium, belonging to the wide-bandgap semiconductor family. This material is primarily of research interest for optoelectronic and photonic applications, where its direct bandgap and optical properties make it relevant for UV-to-infrared device development; however, it remains largely in the experimental phase compared to more mature alternatives like gallium nitride or zinc selenide. Engineers consider MgSe for specialized niche applications requiring wide-bandgap semiconductors, though practical device commercialization faces challenges related to crystal growth quality and material stability.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,427.5 | ksi | — | ||
Shear Modulus(G) | 6,596.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.117 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.349 | eV/atom | — |