Mg₁Sb₄O₈ is an inorganic oxide semiconductor compound based on magnesium and antimony oxides, belonging to the family of ternary metal oxides. This material is primarily studied in research contexts for optoelectronic and photocatalytic applications, where mixed-metal oxide semiconductors offer tunable band gaps and enhanced charge transport properties compared to single-element oxides. Its potential relevance lies in photovoltaic devices, gas sensing, and environmental remediation where oxide semiconductors serve as active functional materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 70.39 | GPa | — | ||
Shear Modulus(G) | 37.03 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.615 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.605 | eV/atom | — |