Mg₁Ni₂N₂ is an experimental ternary nitride semiconductor compound combining magnesium, nickel, and nitrogen. This material belongs to the family of metal nitrides, a class of wide-bandgap semiconductors under active research for next-generation electronics and optoelectronics applications. Although not yet commercialized at scale, ternary nitrides like this system are investigated for their potential in high-temperature power devices, UV-emitting components, and advanced catalytic systems where thermal stability and electronic properties could offer advantages over conventional binary nitrides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,218.3 | ksi | — | ||
Shear Modulus(G) | 7,385.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00130 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.01500 | eV/atom | — |