Mg1 Ni2 In1

semiconductor

· Mg1 Ni2 In1

Mg₁Ni₂In₁ is an intermetallic semiconductor compound combining magnesium, nickel, and indium in a stoichiometric ratio. This is a research-phase material primarily investigated for its electronic and photonic properties rather than structural applications, belonging to the broader family of ternary semiconductors explored for optoelectronics and quantum applications. The material's potential lies in specialized semiconductor devices where the unique band structure of intermetallic compounds offers advantages over conventional binary semiconductors, though industrial adoption remains limited and the material is typically encountered in fundamental materials research and exploratory device prototyping rather than established manufacturing.

experimental semiconductorsintermetallic compoundsoptoelectronic researchphotonic materials developmentquantum material studiesbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	110.2	GPa	—
Shear Modulus(G)	49.04	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.06540	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2170	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mg1 Ni2 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control