Mg₁Cu₂N₂ is an experimental ternary nitride semiconductor compound combining magnesium, copper, and nitrogen in a fixed stoichiometric ratio. This material belongs to the emerging class of multi-element nitride semiconductors, which are being investigated for potential applications in optoelectronics and wide-bandgap device engineering where conventional semiconductors have limitations. Research on such compounds focuses on tuning electronic properties and exploring their viability as alternatives to established III-N systems, though practical device-level applications remain largely under development.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 106.2 | GPa | — | ||
Shear Modulus(G) | 35.26 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00140 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.2400 | eV/atom | — |