Mg₁Bi₄O₈ is a ternary oxide semiconductor compound composed of magnesium, bismuth, and oxygen. This material belongs to the family of mixed-metal oxides and is primarily of research interest rather than established in high-volume industrial production. As an emerging semiconductor, it is being investigated for potential applications in optoelectronics and photocatalysis, where bismuth-containing oxides have shown promise due to their narrow bandgaps and electronic properties that differ from conventional binary oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,544.2 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,316.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7541 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.410 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data