Mg₁Bi₄O₈ is a ternary oxide semiconductor compound composed of magnesium, bismuth, and oxygen. This material belongs to the family of mixed-metal oxides and is primarily of research interest rather than established in high-volume industrial production. As an emerging semiconductor, it is being investigated for potential applications in optoelectronics and photocatalysis, where bismuth-containing oxides have shown promise due to their narrow bandgaps and electronic properties that differ from conventional binary oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 72.70 | GPa | — | ||
Shear Modulus(G) | 29.76 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.7541 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.410 | eV/atom | — |