Mg1 As1

semiconductor
· Mg1 As1

MgAs (magnesium arsenide) is a III-V binary semiconductor compound with a zinc-blende crystal structure, belonging to the family of wide-bandgap semiconductors. This material is primarily of research and developmental interest rather than established in high-volume production, with potential applications in optoelectronic and high-frequency electronic devices where its direct bandgap and thermal properties could offer advantages over more conventional semiconductors. Engineers would consider MgAs for specialized applications requiring wide-bandgap semiconductors in extreme environments or where its unique lattice properties enable novel device architectures, though material maturity, availability, and established manufacturing processes remain limiting factors compared to GaAs or other mature III-V compounds.

Research optoelectronicsHigh-frequency RF devicesWide-bandgap semiconductor applicationsExperimental quantum devicesUV photodetectorsExtreme environment electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.