LuHfO3 is a rare-earth hafnate ceramic compound combining lutetium and hafnium oxides, representing an advanced refractory and high-k dielectric material under active research development. This material is primarily investigated for next-generation microelectronic gate dielectrics, high-temperature structural applications, and thermal barrier coatings, where its combination of high dielectric constant, thermal stability, and chemical inertness offers advantages over conventional oxides in extreme environments and scaled semiconductor devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · PBE | ||
Magnetic Moment(μB) | 0.000 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.008 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data