Lu3Al1N1 is a rare-earth aluminum nitride semiconductor compound combining lutetium, aluminum, and nitrogen in a nitride crystal structure. This material is primarily of research and development interest rather than established commercial production, with potential applications in high-temperature and high-power electronic devices that exploit the wide bandgap and thermal stability characteristic of nitride semiconductors. The incorporation of lutetium—a rare-earth element—distinguishes this compound from conventional GaN and AlN semiconductors, offering potential for enhanced electronic properties in specialized optoelectronic or high-frequency applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,093.6 | ksi | — | ||
Shear Modulus(G) | 11,101.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01590 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.058 | eV/atom | — |