Lu₁Bi₂I₁O₄ is an experimental mixed-metal oxyiodide semiconductor combining lutetium, bismuth, iodine, and oxygen. This compound belongs to the emerging class of halide perovskites and related structures being investigated for optoelectronic and photovoltaic applications, where the combination of heavy elements (Bi, I) can produce favorable band gaps and strong light absorption. The material is primarily found in academic research rather than commercial production, with potential value in next-generation photovoltaic cells, X-ray detectors, and scintillators where the high atomic number of bismuth and lutetium provides enhanced radiation interaction cross-sections.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 81.44 | GPa | — | ||
Shear Modulus(G) | 46.09 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.601 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.109 | eV/atom | — |