LiZnN is a ternary nitride semiconductor compound combining lithium, zinc, and nitrogen elements. This is primarily a research material being investigated for optoelectronic and wide-bandgap semiconductor applications, with potential relevance to next-generation device technologies that demand materials beyond conventional binary nitrides like GaN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 16,788.7 | ksi | DFT | ||
| ↳ | 17,191.3 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2100 | - | DFT · OptB88vdW | ||
Shear Modulus(G)2 entries | 12,321.9 | ksi | DFT | ||
| ↳ | 12,873.6 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1753 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.910 | eV | Measured | ||
| ↳ | 1.980 | eV | Measured | ||
| ↳ | 0.8260 | eV | DFT · OptB88vdW | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 18.60 | - | DFT · OptB88vdW | ||
| ↳ | 20.40 | - | DFT · PBE | ||
| ↳ | 13.89 range 9.571–18.21median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 7.566 | - | DFT · OptB88vdW | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.1700 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.070 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.7228 | C/m² | DFT · OptB88vdW | ||
| ↳ | 0.2936 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.000325 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00299 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -54.95 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 326.9 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4031 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data