LiGaAs is a lithium gallium arsenide compound semiconductor ceramic, combining III-V semiconductor properties with lithium doping to modify electronic and optical characteristics. This material belongs to the gallium arsenide family and is primarily investigated for optoelectronic and photonic applications where tuned bandgap and nonlinear optical properties are advantageous. It represents a specialized research compound rather than a mainstream engineering material, offering potential in integrated photonics, frequency conversion, and solid-state laser systems where conventional GaAs substrates require performance enhancement through lithium incorporation.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 126.2 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | -0.5500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 256.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1487 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3090 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1898 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data