LiBiS₂ is an experimental ternary semiconductor compound composed of lithium, bismuth, and sulfur, belonging to the family of mixed-metal chalcogenides. While not yet established in mainstream industrial production, compounds in this chemical family are of research interest for optoelectronic and photovoltaic applications due to their tunable bandgap and potential for cost-effective thin-film device fabrication. Engineers evaluating LiBiS₂ would do so primarily in laboratory and prototype contexts, where the combination of earth-abundant constituent elements and semiconductor behavior make it an alternative to conventional III-V or II-VI semiconductors for emerging energy conversion or sensing technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 43.51 | ksi | — | ||
Poisson's Ratio(ν) | -0.3000 | - | — | ||
Shear Modulus(G) | 52.21 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1952 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.1800 | eV | — | ||
| ↳ | 0.1100 | eV | — | ||
| ↳ | 1.441 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 92.66 range 18.62–166.7median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -58.36 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.8569 | eV/atom | — |